Auteur(s): Otsuji T, Watanabe Takayuki, Boubanga Tombet Stephane, Suemitsu T., Coquillat D., Knap W., Fateev D. V., Popov V. V.
Conference: 25th International Conference on Indium Phosphide and Related Materials (IPRM) (Kobe, JP, 2013-05-19)
Actes de conférence: 2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), vol. p.1-3 (2013)
Ref HAL: hal-00980610_v1
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Résumé:
This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/root Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.