High performance bilayer-graphene terahertz detectors Auteur(s): Spirito Davide, Coquillat D., de Bonis Sergio L., Lombardo Antonio, Bruna Matteo, Ferrari Andrea C., Pellegrini Vittorio, Tredicucci Alessandro, Knap W., Vitiello Miriam S. (Article) Publié: Applied Physics Letters, vol. 104 p.061111 (2014) Texte intégral en Openaccess : Ref HAL: hal-00960242_v1 Ref Arxiv: 1312.3737 DOI: 10.1063/1.4864082 WoS: 000331803800011 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote 149 Citations Résumé: We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems. |