High-performance room-temperature THz nanodetectors with a narrowband antenna Auteur(s): Viti L., Coquillat D., Ercolani D., Knap W., Sorba L., Vitiello M.
Conference: TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS VII (San Francicco, US, 2014-02-04) Ref HAL: hal-01056398_v1 DOI: 10.1117/12.2040529 WoS: 000337347500018 Exporter : BibTex | endNote 2 Citations Résumé: We report on the development of a novel class of nanowire-based THz detectors in which the field effect transistor (FET) is integrated in a narrow-band antenna. When the THz field is applied between the gate and the source terminals of the FET, a constant source-to-drain photovoltage appears as a result of the non-linear transfer characteristic of the transistor. In order to achieve attoFarad-order capacitance we fabricate lateral gate FET with gate widths smaller than 100 nm. Our devices show a maximum responsivity of 110 V/W without amplification, with noise equivalent power levels <= 1 nW/root Hz at room temperature. The 0.3 THz resonant antenna has bandwidth of similar to 10 GHz and opens a path to novel applications of our technology including metrology, spectroscopy, homeland security, biomedical and pharmaceutical applications. Moreover the possibility to extend this approach to relatively large multi-pixel arrays coupled with THz sources makes it highly appealing for a future generation of THz detectors. |