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- Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells doi link

Auteur(s): Rosales D.(Corresp.), Gil B., Bretagnon T., Guizal B., Izyumskaya N, Monavarian M, Zhang F, Okur Serdal, Avrutin Vitaly, Ozgur Umit, Morkoc Hadis

(Article) Publié: Journal Of Applied Physics, vol. 116 p.093517 (2014)


Ref HAL: hal-01061676_v1
DOI: 10.1063/1.4894513
WoS: 000342827800022
Exporter : BibTex | endNote
15 Citations
Résumé:

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm−2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.