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- Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD doi link

Auteur(s): Kwasnicki P., Arvinte Roxana, Peyre H., Zielinski Marcin, Konczewicz L., Contreras S., Camassel J., Juillaguet S.

Conference: HETEROSIC 2013 (nice, FR, 2013-06)
Actes de conférence: Material Sciences Forum, vol. 806 p.51 - 55 (2014)


Ref HAL: hal-01936666_v1
DOI: 10.4028/www.scientific.net/MSF.806.51
Exporter : BibTex | endNote
Résumé:

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD