Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD Auteur(s): Kwasnicki P., Arvinte Roxana, Peyre H., Zielinski Marcin, Konczewicz L., Contreras S., Camassel J., Juillaguet S.
Conference: HETEROSIC 2013 (nice, FR, 2013-06) Ref HAL: hal-01936666_v1 DOI: 10.4028/www.scientific.net/MSF.806.51 Exporter : BibTex | endNote Résumé: Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD |