Ref HAL: hal-01158625_v1
DOI: 10.1002/pssb.201552126
WoS: 000360671200028
Exporter : BibTex | endNote
Résumé:

Phonon dispersion ω(q) and phonon density of states g(ω) of the high-pressure rocksalt phase of InN are calculated ab initio, at different pressures, using the density functional perturbation theory. Born effective charge e ∗ T , LDA values of dielectric con- stant ∞ and of the electronic gap E g are obtained as well. Building on the theoretical knowledge of phonon frequencies and their evolution with pressure, we attempt to interpret the set of six bands found previously in Raman spectra of epitaxial layers and of InN-nanowires.