Ref HAL: hal-01203313_v1
DOI: 10.1063/1.4931624
WoS: 000361832600023
Exporter : BibTex | endNote
28 Citations
Résumé:

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, and Yoichi Kawakami, Journal of Applied Physics 117, 075701 (2015). Our results indicate that low temperature internal quantum efficiencies sit in the 50 % range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57 % with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5 % up to 4.3 % at room temperature.