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- Interlayer Dependence of G-Modes in Semiconducting Double-Walled Carbon Nanotubes doi link

Auteur(s): Levshov D., Michel T.(Corresp.), Arenal Raul, Tran H.-N., Than X. T., Paillet M., Yukzuk Yuri, Sauvajol J.-L.

(Article) Publié: The Journal Of Physical Chemistry C, vol. 119 p.23196-23202 (2015)
Texte intégral en Openaccess : openaccess


Ref HAL: hal-01243524_v1
DOI: 10.1021/acs.jpcc.5b05888
WoS: WOS:000362702100050
Exporter : BibTex | endNote
19 Citations
Résumé:

A double-walled carbon nanotube (DWNT), a coaxial composite of two single walled carbon nanotubes (SWNT), provides a unique model to study interactions between thetwo constituent SWNTs. Combining high resolution transmission electron microscopy (HRTEM), electron diffraction (ED), and resonant Raman scattering (RRS) experiments on the same individual suspended DWNT is the ultimate way to relate unambiguously its atomicstructure, defined by the chiral indices of the coaxial outer/inner SWNTs, and its Raman-active vibration modes. This approach is used to investigate the intertube distance dependence of theG-modes of individual index-identified DWNTs composed of two semiconducting SWNTs.We state the main features of the dependence of the G-mode frequencies on the distance between the inner and outer layers: (i) When the interlayer distance is larger than the nominal van der Waals distance (close to 0.34 nm), a downshift of the inner-layer G-modes with respectto the G-modes in the equivalent SWNTs is measured. (ii) The amplitude of the downshiftdepends on the interlayer distance, or in other words, on the negative pressure felt by the innerlayer in DWNT. (iii) No shift is observed for an intertube distance close to 0.34 nm.