Auteur(s): Coquillat D., Nodjiadjim V., Konczykowska A., Diakonova N., Consejo C., Ruffenach S., Teppe F., Riet M., Muraviev A., Gutin A., Shur M., Godin J., Knap W.
Conference: 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19) (Salamanca, ES, 2015)
Texte intégral en Openaccess : 
Ref HAL: hal-01249949_v1
DOI: 10.1088/1742-6596/647/1/012036
WoS: WOS:000366236800036
Exporter : BibTex | endNote
8 Citations
Résumé:
This paper presents terahertz detectors based on high performance 0.7-μm InP double heterojunction bipolar transistor (DHBT) technology and reports on the analysis of their voltage responsivity over a wide frequency range of the incoming terahertz radiation. The detectors operated without any spatial antennas to couple terahertz radiation to the device and have been characterized in the 0.25 - 3.1 THz range with the responsivities (normalized to 1 W radiant power) of 5 V/W and 200 μV/W measured at 0.35 THz and 3.11 THz, respectively. The InP DHBTs also performed as the imaging single-pixels at room temperature in the raster scanned transmission mode. A set of the sub-terahertz images of plant leaves suggest potential utility of InP DHBT detectors for terahertz imaging dedicated to non-invasive testing of plants.