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- Optical properties of hexagonal boron nitride hal link

Auteur(s): Cassabois G.(Corresp.), Valvin P., Gil B.

Conférence invité: 11th International Conference on Nitride Semiconductors (ICNS11) (Beijing, CN, 2015-08-31)


Ref HAL: hal-01281931_v1
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Résumé:

In this paper, I will review our recent results demonstrating that hBN has an indirect bandgap at 5.9 eV. I will show that the optical properties of hBN are profoundly determined by phonon-assisted transitions with a mirror symmetry between emission and absorption around the indirect exciton at 5.9 eV (Figure 1). I will provide a comprehensive analysis of the emission spectrum in the deep ultraviolet in terms of phonon-assisted transitions involving either virtual or real excitonic states, the latter being provided by structural defects. I will finally point out the complex relaxation dynamics of the quantum gas formed by the reservoir of indirect excitons.