InP Double Heterojunction Bipolar Transistor for detection above 1 THz Auteur(s): Coquillat D., Nodjiadjim V., Konczykowska A., Diakonova N., Consejo C., Ruffenach S., Teppe F., Riet M., Muraviev A., Gutin A., Shur M., Godin J., Knap W.
Conference: 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) (Hong Kong, CN, 2015) Ref HAL: hal-01336484_v1 WoS: WOS:000376674000385 Exporter : BibTex | endNote Résumé: We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz. They can operate far above the frequencies at which they have gain and can still rectify THz current and voltage. |