Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization Auteur(s): Florentin Matthieu, Rafi Joan Marc, Chevalier Florian, Soler Victor, Konczewicz L., Contreras S., Juillaguet S., Montserrat Josep, Godignon Philippe
Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09) Ref HAL: hal-01936637_v1 DOI: 10.4028/www.scientific.net/MSF.821-823.717 Exporter : BibTex | endNote Résumé: In this work, a charge pumping characterization has been carried out on 4H-SiC nMOSFETs built with different SiC doping processes. Because charge pumping (CP) measurements on SiC are complex to implement, three different CP methods have been used for Dit characterization. The impact of geometrical and electrical parameters on each method is studied. Finally, it is detailed the full measurement flow chosen for a deeper and more accurate understanding of Dit electrical characterization. |