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- Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization doi link

Auteur(s): Florentin Matthieu, Rafi Joan Marc, Chevalier Florian, Soler Victor, Konczewicz L., Contreras S., Juillaguet S., Montserrat Josep, Godignon Philippe

Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09)
Actes de conférence: Material Sciences Forum, vol. 821-823 p.717 - 720 (2015)


Ref HAL: hal-01936637_v1
DOI: 10.4028/www.scientific.net/MSF.821-823.717
Exporter : BibTex | endNote
Résumé:

In this work, a charge pumping characterization has been carried out on 4H-SiC nMOSFETs built with different SiC doping processes. Because charge pumping (CP) measurements on SiC are complex to implement, three different CP methods have been used for Dit characterization. The impact of geometrical and electrical parameters on each method is studied. Finally, it is detailed the full measurement flow chosen for a deeper and more accurate understanding of Dit electrical characterization.