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- Nuclear spin warm up in bulk n-GaAs doi link

Auteur(s): Kotur M., Dzhioev R. I., Vladimirova M., Jouault B., Korenev V. L., Kavokin K. V.

(Article) Publié: Physical Review B, vol. 94 p.081201 (2016)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-01393714_v1
DOI: 10.1103/PhysRevB.94.081201
WoS: WOS:000381889700002
Exporter : BibTex | endNote
10 Citations
Résumé:

We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n-GaAs bulk crystal.