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- Indirect excitons and electron-phonon interaction in hexagonal boron nitride hal link

Auteur(s): Cassabois G.(Corresp.)

Conférence invité: International Workshop on Nitride Semiconductors (IWN 2016) (Orlando, US, 2016-10-05)


Ref HAL: hal-01399935_v1
Exporter : BibTex | endNote
Résumé:

In this paper, we discuss our recent experiments by two-photon spectroscopy demonstrating that hBN is an indirect bandgap material. We will show that the optical properties of hBN are profoundly determined by phonon-assisted transitions involving either virtual or real excitonic states. We will present our measurements of the exciton binding energy by two-photon excitation, leading to the estimation of 6.08 eV for the single-particle bandgap in hBN. We will also discuss our experimental evidence that transverse optical phonons at the K point of the Brillouin zone assist inter-K valley scattering in hexagonal boron nitride.