Auteur(s): Monaravian Mortezza, Rosales D., Gil B., Izyumskaya Natalia, Ozgur Umit, Avrutin Vitaliy, Morkoc Hadis
Conference: Gallium Nitride Materials and Devices XI, (San francisco, US, 2016-02-07)
Actes de conférence: proceedings of SPIE, vol. p. (2016)
Ref HAL: hal-01406941_v1
DOI: 10.1117/12.2213835
WoS: 000383241000028
Exporter : BibTex | endNote
4 Citations
Résumé:
Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.