Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect Auteur(s): Yang M., Couturaud O., Desrat W., Consejo C., Kazazis D., Yakimova R., Syvajarvi M., Goiran Michel, Béard Jérome, Frings P., Pierre Mathieu, Cresti A., Escoffier Walter, Jouault B. (Article) Publié: Physical Review Letters, vol. 117 p.237702 (2016) Texte intégral en Openaccess : Ref HAL: hal-01939530_v1 Ref Arxiv: 1611.08179 DOI: 10.1103/PhysRevLett.117.237702 WoS: WOS:000389032600014 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote 12 Citations Résumé: We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The ν=2 quantized plateau appears from fields B≃5 T and persists up to B≃80 T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1/B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current. |