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- Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect doi link

Auteur(s): Yang M., Couturaud O., Desrat W., Consejo C., Kazazis D., Yakimova R., Syvajarvi M., Goiran Michel, Béard Jérome, Frings P., Pierre Mathieu, Cresti A., Escoffier Walter, Jouault B.

(Article) Publié: Physical Review Letters, vol. 117 p.237702 (2016)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-01939530_v1
Ref Arxiv: 1611.08179
DOI: 10.1103/PhysRevLett.117.237702
WoS: WOS:000389032600014
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
12 Citations
Résumé:

We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The ν=2 quantized plateau appears from fields B≃5  T and persists up to B≃80  T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1/B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.