Auteur(s): Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.
(Article) Publié:
Acta Physica Polonica A, vol. 129 p.A126-A128 (2016)
Texte intégral en Openaccess : 
Ref HAL: hal-01944980_v1
DOI: 10.12693/APhysPolA.129.A-126
WoS: WOS:000371623600032
Exporter : BibTex | endNote
1 Citation
Résumé:
Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.