Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs Auteur(s): Diakonova N., Karandashev S.A., Levinshtein M.E., Matveev B.A., Remennyi M.A., Usikova A.A. (Article) Publié: Infrared Physics Technology, vol. 117 p.103867 (2021) Texte intégral en Openaccess : Ref HAL: hal-04104578_v1 DOI: 10.1016/j.infrared.2021.103867 Exporter : BibTex | endNote Résumé: Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that photocurrent fluctuations under LED illumination are smaller than photocurrent fluctuations under a black body illumination. When the photodiode is illuminated by LED, the spectral noise density follows the 1/f dependence. In the case of a black body illumination we observe a significant contribution of generation-recombination noise. |