Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)

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Accueil > La Recherche > Axes & Equipes > Physique Appliquée > Semi-conducteurs : Graphène, grand gap & Photovoltaïques > Photovoltaïque et mono-chalcogénures

Photovoltaïque et mono-chalcogénures


Photovoltaïque et mono-chalcogénures

Structures photovoltaïques à base de CIGS
Mono-chalcogénures 3D et 2D : croissance et transport

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growth and transport of mono-chalcogenides : GaSe, InSe

Using our know-how on the growth of chalcogenides, and having the proper growth tools, we are interested to grow layers and structures of mono-chalcogenides, such as InSe and GaSe, in order to (...)

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Electrical studies

This is the most important characterizations to assess the quality of the devices, but also to get some insights on the physical mechanisms regarding impurities, traps, ...

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X-ray diffraction

We use X-ray diffraction to assess the material quality, measure the crystalline domain sizes and determine the composition fo the alloys

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Optical studies

Optical characterization is an efficient way to determine material quality and purity, as well as to determine the bandgap of the CIGS alloy.

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Chemical Bath Deposition (CBD)

The n-type layer of the junction which constitutes the solar cell is deposited by a very simple technique, using chemical baths.

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SEM and AFM microscopy

Atomic Force Microscopy (SEM) and Scanning Electron Microscopy (SEM) are essential tools used at L2C to assess the structural quality of solar cell samples.

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Co-evaporation of CIGS

The CIGS, main layer (absorber) of the solar cell, is deposited by evaporating all elements in a very high vaccuum.

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RF magnetron sputtering

The RF magnetron sputtering is used in our group to grow the molybdenum back contact and the ZnO transparent window in our cells.

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CIGS based photovoltaic structures

We are involved in the growth of CuInGaSe2 (CIGS) photovoltaic structures. We focus on the physical mechanisms involved in both the growth of the devices and their operation.

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