Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)


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- Superconducting Ga/GaSe layers grown by van der Waals epitaxy doi link

Auteur(s): Desrat W.(Corresp.), Moret M., Briot O., Ngo T. H., Jabakhanji B., Piot Benjamin, Gil B.

(Article) Publié: -Materials Research Express, vol. 5 p.045901 (2018)

Ref HAL: hal-01784269_v1
DOI: 10.1088/2053-1591/aab8c5
Exporter : BibTex | endNote

We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.