THz imaging with low-cost 130 nm CMOS transistors Auteur(s): Schuster Franz, Sakowicz Maciej, Siligaris Alexandre, Dussopt Laurent, Videlier H., Coquillat D., Teppe F., Giffard Benoît, Dobroiu Adrien, Skotnicki Thomas, Knap W.
Conference: SPIE2010-Security and Defence SD108 Millimetre Wave and Terahertz Sensors and Technology (Toulouse, FR, 2010-09-20) Ref HAL: hal-00550843_v1 DOI: 10.1117/12.864877 WoS: 000287712500003 Exporter : BibTex | endNote 2 Citations Résumé: We report on active imaging with CMOS transistors at 300 GHz and 1.05 THz. Two basic focal plane arrays consisting of nMOS transistors and wide-band bow-tie antennas have been implemented in a low-cost 130 nm CMOS technology. Raster scan imaging of objects concealed in a paper envelope has been achieved at 300 GHz with a commercial radiation source. The images clearly reveal the concealed objects with a dynamic range of 35 dB and a resolution of 3 mm. At 1.05 THz, the pixels achieve a responsivity of 50 V/W and a noise equivalent power of 900 pW/Hz0.5. |