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(137) Production(s) de GUILLET T.
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Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers 
Auteur(s): Seguin Robert, Guillet T., Taliercio T., Lefebvre P., Bretagnon T., Zhang X.B., Ryou J.-H., Dupuis R.D.
(Article) Publié:
The European Physical Journal Applied Physics, vol. 37 p.15 (2007)
Texte intégral en Openaccess : 
Ref HAL: hal-00389970_v1
DOI: 10.1051/epjap:2007006
WoS: 000243790800003
Exporter : BibTex | endNote
2 Citations
Résumé: We report continuous wave and time resolved photoluminescence studies of self-assembled InP quantum dots grown by metalorganic chemical vapor deposition. The quantum dots are embedded into indirect band-gap In0.5Al0.5P layers or In0.5Al0.3Ga0.2P layers with a conduction band line-up close to the direct-to-indirect crossover. As revealed by photoluminescence spectra, efficient interdiffusion of species from the barrier layers produces (Al,In)P or (Al,Ga,In)P-dots. This interdiffusion creates potential barriers that are repulsive for electrons of X valleys around the QDs. Both samples show a fast exponential decay component with a time constant between 0.5 and 0.7 ns. In addition, the sample with indirect band gap matrix shows a slow non-exponential time-decay, which is still visible after more than 100 µs. The fast component is attributed to direct recombination of electron-hole pairs in the dots whilst the slow component, which follows a power law t^-0.75 results from recombination of holes in the dots and electrons in metastable states around the dots.
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Radiative lifetime in wurtzite GaN/AlN quantum dots.
Auteur(s): Bardoux Richard, Bretagnon T., Guillet T., Lefebvre P., Taliercio T., Valvin P., Gil B., Semond F., Grandjean N., Damilano B., Dussaigne Amélie, Massies Jean
Conference: International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06) (Montpellier, FR, 2006-05-15)
Actes de conférence: Physica Statu Solidi (c), vol. 4 p.183 (2007)
Texte intégral en Openaccess :
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Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.
Auteur(s): Bardoux Richard, Guillet T., Lefebvre P., Taliercio T., Bretagnon T., Gil B., Semond F.
Conference: International Workshop on Nitrides Semiconductors (IWN) (Kyoto, JP, 2006-10-22)
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
Auteur(s): Kalliakos S., Bretagnon T., Lefebvre P., Juillaguet S., Taliercio T., Guillet T., Gil B., Grandjean N., Damilano B., Dussaigne A., Massies J.
Conference: 5th Interantional Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004) (Gyeongin (SOUTH KOREA), FR, 2004-03-15)
Actes de conférence: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 241 p.2779-2782 (2004)
Ref HAL: hal-00543738_v1
Exporter : BibTex | endNote
Résumé: We analyze the low temperature photoluminescence properties of two multi-layer stacking of GaN/AlN quantum dots. We report drastic differences of linewidths between continuous wave and time-resolved photoluminescence experiments. After the pulsed excitation, time-resolved photoluminescence reveals a substantial red shift of the line, which keeps a fairly constant width. In continuous wave experiments, the screening of internal electric fields by accumulation of e-h pairs in quantum dot planes induces a blue-shift. For samples with large number of quantum dot planes an unexpected narrowing of the emission line is observed when the laser intensity is increased. We assign the observed behaviors of energies and linewidths to the contributions of the in-depth decrease of the degree of excitation of the different planes. Our interpretation is supported by the use of a model based on a self-consistent solution of the Schrodinger and Poisson equations within the envelope function approximation.
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