Ref HAL: hal-01398059_v1
DOI: 10.1021/acsphotonics.6b00236
WoS: WOS:000380297200015
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11 Citations
Résumé:

We demonstrate high-spatial resolution imaging of localized cavity modes through third-harmonic frequency conversion. The experiments are performed with a III-nitrideon-silicon photonic platform. The resonant cavities are formed within suspended two-dimensional photonic crystals and are excited with a continuous-wave excitation around 1550 nm. The III-nitride materials (GaN and AlN) are transparent for both pump and harmonics. The third-harmonic nonlinear process allows one to indirectly observe the fundamental confined cavity mode with spatial profiles equivalent to those usually obtained by local probe microscopy techniques such as scanning near-field optical microscopy. An excellent agreement is obtained between the measured polarization-resolved third harmonic emission patterns and those calculated through the third-order nonlinear polarization. We show that the spatial profiles of the radiated patterns are strongly dependent on defocusing, thus highlighting the strong sensitivity of the imaging.

Ref HAL: hal-01398056_v1
Ref Arxiv: 1603.05093
DOI: 10.1016/j.crhy.2016.07.002
WoS: WOS:000384759600010
Ref. & Cit.: NASA ADS
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13 Citations
Résumé:

We review the recent developments of the polariton physics in microcavities featuring the exciton-photon strong coupling at room-temperature, and leading to the achievement of room-temperature polariton condensates. Such cavities embed active layers with robust excitons that present a large binding energy and a large oscillator strength, i.e. wide bandgap inorganic or organic semiconductors, or organic molecules. These various systems are compared, in terms of figures of merit and of common features related to their strong oscillator strength. The various demonstrations of polariton laser are compared, as well as their condensation phase diagrams. The room-temperature operation indeed allows a detailed investigation of the thermodynamic and out-of-equilibrium regimes of the condensation process. The crucial role of the spatial dynamics of the condensate formation is discussed, as well as the debated issue of the mechanism of stimulated relaxation from the reservoir to the condensate under non-resonant excitation. Finally the prospects of polariton devices are presented.

Ref HAL: hal-01388983_v1
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Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong internal electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. Extensive studies of indirect excitons (IXs) in GaAs-based heterostructures have shown that a combination of these two features results in many interesting properties of IXs: they can propagate over large distances, can be controlled in-situ by light and external gate voltage, cool down to the lattice temperature before recombination, and form cold and dense gas of interacting bosons. Compared to traditional IXs in arsenide heterostrutures, IXs in GaN QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature, and over a much larger density range. Using spatially- and time-resolved photoluminescence experiments, we have investigated the exciton transport in a 7 nm-wide GaN single QW sandwiched between Al0.19Ga0.81N barriers. The IX emission is imaged, with spectral and temporal resolutions, along the sample plane. Therefore the corresponding spatial density profiles are obtained and monitored as a function of (i) temperature, (ii) the exciton density at the excitation spot, (iii) the substrate material (GaN vs Sapphire) and (iv) the excitation regime (continuous vs pulsed excitation) [F. Fedichkin et al., Phys. Rev. B 91, 205424 (2015)]. We provide a comprehensive analysis of the data combined with numerical modeling, and we show that the efficient propagation of IXs takes place in the high density regime where the in-plane disorder is efficiently screened by the dipole-dipole interaction. Under these latter conditions, exciton mobility is almost temperature-independent from 10K up to room temperature. This suggests that exciton-exciton interaction is by far the dominant scattering mechanism, compared to scattering by the interface disorder. However, the exciton transport is maintained up to 300K only in the QW that was epitaxially grown on a GaN substrate, since nonradiative processes dominate the transport in the case of a sapphire substrate, for which high densities of threading dislocations are present.We provide a detailed understanding of the physical mechanisms of IX transport and its temperature and density dependence, and we show that nitride-hosted IXs constitute a promising system for the formation of collective bosonic states in semiconductors. Financial support: projects INDEX (FP7 PITN-GA-2011-289968) and OBELIX (ANR-15-CE30-0020-02).

Ref HAL: hal-01388929_v1
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Résumé:

Excitons in polar group-III nitride quantum wells (QWs) are naturally indirect, because electron and hole within such excitons are spatially separated. As a consequence, they have strong dipole moments and long radiative lifetimes. Extensive studies of indirect excitons (IXs) in GaAs-based heterostructures have shown, that a combination of these two features results in many interesting properties of IXs: they can propagate over large distances, can be controlled in-situ by light and external gate voltage, cool down to the lattice temperature before recombination, and form cold and dense gas of interacting bosons. Compared to traditional IXs in arsenide heterostrutures, IXs in nitride QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature, and over two orders of magnitude higher density range. Using spatially- and time-resolved photoluminescence experiments we examined temperature, density, substrate material (GaN vs Sapphire) and excitation regime (cw vs pulsed excitation) dependence of the exciton transport in 7 nm wide GaN QW sandwiched between Al0.19Ga0.81N barriers, the structure is characterized by internal electric field of order of 1 MV/cm. Comprehensive analysis of the data combined with numerical modeling show that in GaN QWs efficient propagation of IX takes place in the high density regime where the in-plane disorder is efficiently screened by the dipole - dipole interaction. Under these conditions, exciton mobility is almost temperature-independent from 10 K up to room temperature. This suggests that exciton-exciton interaction is by far dominant scattering mechanism, compared to scattering on the interface disorder. In this context, we argue that nitride-hosted IXs constitute a promising system for formation of collective bosonic states in semiconductors.

Commentaires: Plenary Lecture

Ref HAL: hal-01388908_v1
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Ref HAL: hal-01353893_v2
DOI: 10.1103/PhysRevApplied.6.014011
WoS: WOS:000380125900001
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15 Citations
Résumé:

We report on the exciton propagation in polar ðAl; GaÞN=GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonradiative recombination. From the comparison of the spatial and temporal dynamics of photoluminescence, we conclude that the propagation of excitons under continuous-wave excitation is assisted by efficient screening of the in-plane disorder. Modeling within drift-diffusion formalism corroborates this conclusion and suggests that exciton propagation is still limited by the exciton scattering on defects rather than by exciton-exciton scattering so that improving interface quality can boost exciton transport further. Our results pave the way towards room-temperature excitonic devices based on gate-controlled exciton transport in wide-band-gap polar heterostructures.

Ref HAL: hal-01334017_v1
DOI: 10.1364/OE.24.009602
WoS: WOS:000375259600045
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19 Citations
Résumé:

We have developed a nanophotonic platform with microdisks using epitaxial III-nitride materials on silicon. The two-dimensional platform consists of suspended waveguides and mushroom-type microdisks as resonators side-coupled with a bus waveguide. Loaded quality factors up to 80000 have been obtained in the near-infrared spectral range for microdisk diameters between 8 and 15 μm. We analyze the dependence of the quality factors as a function of coupling efficiency. We have performed continuous-wave second harmonic generation experiments in resonance with the whispering gallery modes supported by the microdisks.