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Optical investigation of non polar ZnO/(Zn,Mg)O quantum wells
Auteur(s): Beaur L., Bretagnon T., Guillet T., Brimont C., Gil B., Chauveau J.M., Morhain C.
Conference: 11th International Conference on Light-Matter Coupling in Nanostructures (PLMCN11) (Berlin, DE, 2011-04-04)
Actes de conférence: 11th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN11), vol. 9 p.1225 (2012)
Texte intégral en Openaccess :
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Optical investigations of non-polar homo-epitaxial ZnO/(Zn,Mg)O quantum wells
Auteur(s): Beaur L., Guillet T., Gil B., Brimont C., Bretagnon T., Chauveau J.M., Morhain C.
Conference: 2ème Colloque National ZnO (PARIS, FR, 2011-06-08)
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AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
Auteur(s): Néel Delphine, Sergent Sylvain, Mexis M., Sam-Giao Diane, Guillet T., Brimont C., Bretagnon T., Semond Fabrice, Gayral B., David Sylvain, Checoury X., Boucaud Philippe
(Article) Publié:
Applied Physics Letters, vol. 98 p.261106 (2011)
Texte intégral en Openaccess :
Ref HAL: hal-00632917_v1
DOI: 10.1063/1.3605592
WoS: 000292335700006
Exporter : BibTex | endNote
36 Citations
Résumé: An original method to fabricate III-nitride photonic crystal membranes without etching of III-N materials is reported. A photonic crystal pattern is first realized in a silicon substrate. GaN quantum dots embedded in a thin AlN layer are then grown by conformal epitaxy using ammonia-based molecular beam epitaxy on the top of the patterned silicon substrate and a free-standing membrane is achieved by selective etching of the silicon substrate through the holes of the photonic crystal. Room temperature microphotoluminescence measurements show a quality factor as high as 1800 at 425 nm on a modified L3 cavity. Possibility to achieve lasing with this system is discussed.
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Polariton with high quality factor in a hybrid ZnO-based microcavity
Auteur(s): Mexis M., Brimont C., Guillet T., Gil B., Bretagnon T., Zúñiga-pérez Jesús, Frayssinet Eric, Leroux Mathieu, Semond Fabrice, Orosz Laurent, Reveret François, Disseix Pierre, Leymarie Joel, Mihailovic Martine, Bouchoule Sophie
(Affiches/Poster)
OECS12 (PARIS, FR), 2011-09-13Texte intégral en Openaccess :
Résumé: Polariton with high quality factor in a hybrid ZnO-based microcavity
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TRANSITION FROM STRONG COUPLING TO EXCITONIC
LASING IN A ZNO MICROCAVITY
Auteur(s): Brimont C., Mexis M., Guillet T., Bretagnon T., Gil B., Valvin P., Medard F., Mihailovic Martine, Zúñiga-pérez Jesús, Leroux Mathieu, Semond Fabrice, Bouchoule Sophie
(Affiches/Poster)
OECS12 (PARIS, FR), 2011-09-13Texte intégral en Openaccess :
Résumé: TRANSITION FROM STRONG COUPLING TO EXCITONIC
LASING IN A ZNO MICROCAVITY
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Laser emission with excitonic gain in a ZnO planar microcavity
Auteur(s): Guillet T., Brimont C., Valvin P., Gil B., Bretagnon T., Medard F., Mihailovic Martine, Zúñiga-Pérez Jesús, Leroux Mathieu, Semond F., Bouchoule Sophie
(Article) Publié:
Applied Physics Letters, vol. 98 p.3 (2011)
Texte intégral en Openaccess :
Ref HAL: hal-00554480_v3
Ref Arxiv: 1106.0183
DOI: 10.1063/1.3593032
WoS: 000291041600005
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
23 Citations
Résumé: The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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Low temperature reflectivity study of ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates
Auteur(s): Beaur L., Bretagnon T., Brimont C., Guillet T., Gil B., Tainoff Dimitri, Teisseire M., Chauveau J.M.
(Article) Publié:
Applied Physics Letters, vol. 98 p.101913 (2011)
Texte intégral en Openaccess :
Ref HAL: hal-00553820_v2
Ref Arxiv: 1101.1733
DOI: 10.1063/1.3565969
WoS: 000288277200026
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
34 Citations
Résumé: We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good interface morphologies. Signatures ofc onfined excitons built from the spin-orbit split-off valence band, the analog of exciton C in bulk ZnO are detected in normal incidence reflectivity experiments using a photon polarized along the c axis of the wurtzite lattice. Experiments performed in the context of an orthogonal photon polarization, at 90° of this axis, reveal confined states analogs of A and B bulk excitons. Envelope function calculations which include excitonic interaction nicely account for the experimental report.
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