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(77) Production(s) de BRETAGNON T.
Indirect excitons in polar GaN/(AlGa)N quantum wells Auteur(s): Vladimirova M., Guillet T., Brimont C., Lefebvre P., Bretagnon T., Jouault B., Fedichkin F., Grandjean N, Lahourcade L., Damilano B.
Conférence invité: International school/colloquium in honor of E. Gross (St-Petersbourg, RU, 2017-10-10) |
On the nature of light emission in polar GaN/(AlGa)N quantum wells Auteur(s): Vladimirova M., Guillet T., Brimont C., Scalbert D., Jouault B., Bretagnon T., Lefebvre P., Lahourcade L., Grandjean N, Damilano B.
Conférence invité: International Conference on Hybrid Photonics and Materials (Miconos, GR, 2017-09-25) |
Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells. Auteur(s): Vladimirova M., Guillet T., Jouault B., Brimont C., Scalbert D., Valvin P., Bretagnon T., Lefebvre P., Lahourcade Lise, Grandjean Nicolas, Damilano Benjamin
Conference: International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18. (Würtzburg, DE, 2017-07-09) |
On the nature of light emission in polar GaN/(AlGa)N quantum wells. Auteur(s): Brimont C., Guillet T., Scalbert D., Jouault B., Valvin P., Bretagnon T., Lefebvre P., Lahourcade Lise, Grandjean Nicolas, Damilano B., Vladimirova M. (Affiches/Poster) 12th International Conference on Nitride Semiconductors – ICNS12. (Strasbourg, FR), 2017-07-24 |
Transport of naturally indirect excitons in wide band-gap semiconductor quantum wells. Auteur(s): Lefebvre P., Jouault B., Guillet T., Brimont C., Valvin P., Bretagnon T., Lahourcade L., Grandjean N, Morhain Christian, Chauveau Jean-michel, Vladimirova M., Fedichkin F. (Séminaires) Laboratoire de Physique du Solide (LPS) (Orsay, FR), 2016-10-19 |
Anisotropic optical properties of a homoepitaxial (Zn, Mg)O/ZnO quantum well grown on a-plane ZnO substrate Auteur(s): Ali Mohammed J. Mohammed, Chauveau J. M., Bretagnon T.
Conference: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 (Paris, FR, 2016) |
Transport of indirect excitons in GaN quantum wells. Auteur(s): Guillet T., Jouault B., Fedichkin F., Lefebvre P., Brimont C., Valvin P., Bretagnon T., Lahourcade Lise, Grandjean N., Vladimirova M.
Conference: International Workshop on Nitride Semiconductors (IWN 2016) (Orlando, US, 2016-10-02) |