Accueil > Production scientifique
(64) Production(s) de PEYRE H.
Cross-section doping topography of 4H-SiC VJFETs by various techniques Auteur(s): Tsagaraki K., Nafouti Maher, Peyre H., Vamvoukakis K, Makris N, Kayambaki M, Stavrinidis A, Konstantinidis G, Panagopoulou M, Alquier D., Zekentes Konstantinos
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, DC, US, 2017-09-17) |
Electrical transport properties of p-type 4H-SiC Auteur(s): Contreras S., Konczewicz L., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Juillaguet S.
Conférence invité: E-MRS : Wide bandgap materials for electron devices (Lille, FR, 2016-05-02) |
Modelling of 4H-SiC VJFETs with Self-Aligned Contacts Auteur(s): Zekentes Konstantinos, Vassilevski Konstantin, Stavrinidis Antonis, Konstantinidis Konstantin, Kayambaki Maria, Vamvoukakis Konstantinos, Vassakis Emmanouil, Peyre H., Makris Nikolaos, Bucher Matthias, Schmid Patrick, Stefanakis Dionyssios, Tassis Dimitrios
Conference: 16th International Conference on Silicon Carbide and Related Materials 2015 (Catane, IT, 2015-10-15) |
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC Auteur(s): Contreras S., Konczewicz L., Kwasnicki P., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Kayambaki Maria, Juillaguet S., Zekentes Konstantinos
Conference: 16th International Conference on Silicon Carbide and Related Materials (Catane, IT, 2015-10-05) |
p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum Auteur(s): Zielinski Marc, Arvinte Roxana, Chassagne Thierry, Michon Adrien, Portail Marc, Kwasnicki P., Konczewicz L., Contreras S., Juillaguet S., Peyre H.
Conference: ICSCRM (Giardini Naxos, FR, 2015-10-02) |
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition Auteur(s): Sledziewski T., Vivona M., Alassaad K., Kwasnicki P., Arvinte R., Beljakowa S., Weber H. B., Giannazzo F., Peyre H., Souliere V., Chassagne T., Zielinski M., Juillaguet S., Ferro G., Roccaforte F., Krieger M. (Article) Publié: Journal Of Applied Physics, vol. 120 p.205701 (2016) |
High temperature electrical transport study of Si-doped AlN Auteur(s): Contreras S., Konczewicz L., Ben Messaoud Jaweb, Peyre H., Al Khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien (Article) Publié: Superlattices And Microstructures, vol. 98 p.253-258 (2016) |