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(64) Production(s) de PEYRE H.
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Studying the number of graphene layers on copper substrate 
Auteur(s): Landois P. , Bayle M., Decams J.M., Dieraert Axel, Huntzinger J.-R., Wang T., Peyre H., Jouault B., Zahab A. A., Paillet M., Contreras S.
(Affiches/Poster)
GDR-GNT (Aussois, FR), 2015-11-29
Ref HAL: hal-01340108_v1
Exporter : BibTex | endNote
Résumé: Counting number of graphene layers on copper ? (OK for SiO2/Si, SiC, glass)Graphene source in Montpellier by CVD on copper and on SiC and by SiC sublimation (development of prototype furnace)
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Ge assisted SiC epitaxial growth by CVD on SiC substrate
Auteur(s): Alassaad Kassem, Soulière Véronique, Doisneau Beatrice, Cauwet François, Peyre H., Carole Davy, Chaussende Didier, Ferro Gabriel
Conference: 15th International Conference on Silicon Carbide and Related Materials (Miyasaki, JP, 2013-09-29)
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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
Auteur(s): Kwasnicki P., Arvinte Roxana, Peyre H., Zielinski Marcin, Konczewicz L., Contreras S., Camassel J., Juillaguet S.
Conference: HETEROSIC 2013 (nice, FR, 2013-06)
Actes de conférence: Material Sciences Forum, vol. 806 p.51 - 55 (2014)
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Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
Auteur(s): Arvinte Roxana, Zielinski Marc, Chassagne Thierry, Portail Marc, Michon Adrien, Kwasnicki P., Juillaguet S., Peyre H.
Conference: HETEROSIC 2013 (Nice, FR, 2013-06-13)
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Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
Auteur(s): Kwasnicki P., Jokubavicius V., Sun J. W., Peyre H., Yakimova R., Syvajarvi M., Camassel J., Juillaguet S.
Conference: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 (Miyasaki, JP, 2014)
Actes de conférence: Materials Science Forum, vol. 778-780 p.243-+ (2014)
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Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.
Auteur(s): Alassaad Kassem, Soulière Véronique, Cauwet François, Peyre H., Carole Davy, Kwasnicki P., Juillaguet S., Kups Thomas, Pezoldt Jörg, Ferro Gabriel
(Article) Publié:
Acta Materialia, vol. 75 p.219-226 (2014)
Texte intégral en Openaccess : 
Ref HAL: hal-01023271_v1
Ref Arxiv: 1407.3222
DOI: 10.1016/j.actamat.2014.04.057
WoS: 000340854200019
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
9 Citations
Résumé: In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth parameters like C/Si ratio, polarity, or off-orientation did not show any significant influence. On the other hand, adding GeH4 led to the increase of the intentional n type doping level by a factor of 2 to 5 depending on the C/Si ratio in the gas phase.
Commentaires: 8 pages
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Raman investigation of aluminum-doped 4H-SiC
Auteur(s): Juillaguet S., Kwasnicki P., Peyre H., Konczewicz L., Contreras S., Zielinski Marcin, Camassel J.
Conference: ECSCRM 2012 (Saint-Petersburg, RU, 2012-09-02)
Actes de conférence: Silicon Carbide and Related Materials 2012, vol. 740-742 p.357-360 (2013)
Ref HAL: hal-00803766_v1
DOI: 10.4028/www.scientific.net/MSF.740-742.357
WoS: 000319785500083
Exporter : BibTex | endNote
2 Citations
Résumé: Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×10^19 atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×10^16 - 5×10^19 Al.cm-3
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