Accueil > Production scientifique
(64) Production(s) de PEYRE H.
Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC Auteur(s): Zekentes Konstantinos, Tsagaraki Katerina, Androulidaki Maria, Kayambaki Maria, Stavrinidis Antonis, Peyre H., Camassel J.
Conference: 14th International Conference on Silicon Carbide and Related Materials 2011 (Cleveland, US, 2011-09-11) |
Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations Auteur(s): Sun J. w., Kamiyama S., Jokubavicius V., Peyre H., Yakimova R., Juillaguet S., Syvajarvi M. (Article) Publié: Journal Of Physics D: Applied Physics, vol. 45 p.235107 (2012) |
Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy Auteur(s): Zoulis G., Sun J., Vasiliauskas R., Lorenzzi J., Peyre H., Syvajarvi M., Ferro G., Juillaguet S., Yakimova R., Camassel J.
Conference: HETEROSIC & WASMPE 2011 (TOURS, FR, 2011-06-27) |
Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC Auteur(s): Sun Jianwu, Khranovskyy V., Mexis M., Eriksson M., Syvajarvi M., Tsiaoussis I., Yazdi G.R., Peyre H., Juillaguet S., Camassel J., Holtz P.O., Bergman P., Hultman L., Yalimova R. (Article) Publié: Journal Of Luminescence, vol. 132 p.122-127 (2012) Texte intégral en Openaccess : |
Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications Auteur(s): Peyre H., Sun Jianwu, Guelfucci Jude, Juillaguet S., Hassan J., Henry Anne, Contreras S., Brosselard Pierre, Camassel J.
Conference: HeteroSiC & WASMPE 2011 (TOURS, FR, 2011-06-27) |
Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism Auteur(s): Lorenzzi Jean, Zoulis G., Sun Jianwu, Marinova Maya, Kim-Hak Olivier, Jegenyes Nicoletta, Peyre H., Cauwet François, Chaudouët Patrick, Soueidan Maher, Carole Davy, Camassel J., Polychroniadis Efstathios K., Ferro Gabriel (Article) Publié: Journal Of Crystal Growth, vol. 312 p.3443–3450 (2010) Texte intégral en Openaccess : |
LTPL investigation of N-Ga and N-Al donor-acceptor pair spectra in 3C-SiC layers grown by VLS on 6H-SiC substrates Auteur(s): Sun J. W., Zoulis G., Lorenzzi J., Jegenyes N., Juillaguet S., Peyre H., Souliere V., Ferro G., Milesi F., Camassel J.
Conference: 13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), FR, 2009-10-11) |