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(64) Production(s) de PEYRE H.
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Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C-SiC on Si 
Auteur(s): Ferro G., Camassel J., Juillaguet S., Balloud C., Polychroniadis Ek, Stoemenos Y., Dazord J., Peyre H., Monteil Y., Rushworth Sa, Smith Lm
(Article) Publié:
Semiconductor Science And Technology, vol. 18 p.1015-1023 (2003)
Ref HAL: hal-00543763_v1
Exporter : BibTex | endNote
Résumé: From a comparative evaluation of hexamethyldisilane (HMDS) and silane-propane (SP) precursor systems, it is shown that HMDS needs a small addition of propane to deposit heteroepitaxial layers of 3C-SiC on Si with superior crystalline properties. In this case, propane compensates for the secondary reactions induced by hydrogen reacting with carbon. Using atmospheric pressure chemical vapour deposition conditions, the new system (HMDS-propane) demonstrates several advantages. It is safer to handle than SP and allows a higher growth rate (up to 7 mum h(-1) at 1350 degreesC) without any degradation of the layer morphology. However, when lowering the deposition temperature, HMDS is revealed to be more stable than silane. This is in contrast to most standard beliefs but explains why a high temperature (similar to1350 degreesC) is always necessary to grow high-quality material using HMDS.
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From Transport Measurements to Infrared Reflectance Spectra of n-type Doped 4H-SiC Layer Stacks
Auteur(s): Pernot Julien, Camassel J., Peyre H., Contreras S., Robert Jean-louis
Conference: European Conference on Silicon Carbide and Related Materials (ECSCRM2002) (Linköping, SE, 2002-09-01)
Actes de conférence: Materials Science Forum, vol. 433-436 p.403-406 (2003)
Ref HAL: hal-00389889_v1
Exporter : BibTex | endNote
Résumé: To model the infrared reflectance spectrum of a conductive multiple layer stack, one needs the plasma frequency and damping parameter of every constitutive material. In this work we show how they can be linked to the resistivity or doping level of the different layers. From a typical application performed in the case of Schottky diode structures, we find that between 1000 and 4000 cm-1, the interference shape of the resulting infrared spectrum is mostly sensitive to the doping level and thickness of the buried buffer layer.
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Modeling the infrared reflectance of n-/n+ SiC layers on top of n+ SiC substrates for epitaxy control application
Auteur(s): Camassel J., Pernot Julien, Wang H. Y., Peyre H.
Conference: EXMATEC'02 International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies No6 (Budapest, HU, 2002-05-26)
Actes de conférence: Physica status solidi. A. Applied research, vol. 195 p.38-43 (2003)
Texte intégral en Openaccess : 
Ref HAL: hal-00389902_v1
DOI: 10.1002/pssa.200306265
WoS: 000180796700005
Exporter : BibTex | endNote
15 Citations
Résumé: Infrared reflectance is a powerful tool to control, rapidly and non-destructively, complex active layer stacks for electronic devices applications. The case of interest which is considered in this work concerns 4H-SiC Schottky diode structures. They are made of a lightly doped layer (drift zone, 5 x 1015 cm-3) on top of a heavily doped n+ substrate (5 x 1018 cm-3). In between is a thin (buried) SiC layer used as field stop (or buffer). From model calculations performed in the range 1000-4000 cm-1, we show that the shape of the interference spectra is very sensitive to the doping and thickness of the buried (buffer) layer.
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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Auteur(s): Chassagne Thierry, Ferro Gabriel, Wang H. Y., Stoemenos Yanis, Peyre H., Contreras S., Camassel J., Monteil Yves, Ghyselen B.
Conference: International Conference on Silicon and Carbide and Related Materials 2001 (9th) (ICSCRM2001) (Tsukuba, JP, 2001-10-28)
Actes de conférence: Materials Science Forum, vol. 389-393 p.343-346 (2002)
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Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: Constant vs. constant
Auteur(s): Camassel J., Peyre H., Glew R.W.
(Article) Publié:
Materials Science And Engineering: B, vol. 28 p.353-356 (1994)
Texte intégral en Openaccess :
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Thermally induced change in the profile of GaAs/AlGaAs quantum wells
Auteur(s): Peyre H., Camassel J., Gillin W.P, Homewood H, Grey R
(Article) Publié:
Materials Science And Engineering: B, vol. 28 p.332-336 (1994)
Texte intégral en Openaccess :
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Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures
Auteur(s): Peyre H., Alsina F., Juillaguet S., Massone E., Camassel J., Pascual J., Glew R.W.
(Article) Publié:
Applied Surface Science, vol. 63 p.177-181 (1993)
Texte intégral en Openaccess :
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