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(167) Production(s) de LEFEBVRE P.
On the nature of light emission in polar GaN/(AlGa)N quantum wells. Auteur(s): Brimont C., Guillet T., Scalbert D., Jouault B., Valvin P., Bretagnon T., Lefebvre P., Lahourcade Lise, Grandjean Nicolas, Damilano B., Vladimirova M. (Affiches/Poster) 12th International Conference on Nitride Semiconductors – ICNS12. (Strasbourg, FR), 2017-07-24 |
Transport of naturally indirect excitons in wide band-gap semiconductor quantum wells. Auteur(s): Lefebvre P., Jouault B., Guillet T., Brimont C., Valvin P., Bretagnon T., Lahourcade L., Grandjean N, Morhain Christian, Chauveau Jean-michel, Vladimirova M., Fedichkin F. (Séminaires) Laboratoire de Physique du Solide (LPS) (Orsay, FR), 2016-10-19 |
Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum Wells Auteur(s): Suski Tadeusz, Staszczak Grzegorz, Lefebvre P., Korona Krzysztof Piotr, Drozdz Piotr, Muziol Grzegorz, Skierbiszewski Czeslaw, Kulczykowski M., Matuszewski M., Grzanka Ewa, Grzanka Szymon, Smalc-Koziorowska Julita, Khachapuridze A., Perlin Piotr
Conference: International Workshop on Nitride Semiconductors (IWN 2016) (Orlando, US, 2016-10-02) |
Transport of indirect excitons in GaN quantum wells. Auteur(s): Guillet T., Jouault B., Fedichkin F., Lefebvre P., Brimont C., Valvin P., Bretagnon T., Lahourcade Lise, Grandjean N., Vladimirova M.
Conference: International Workshop on Nitride Semiconductors (IWN 2016) (Orlando, US, 2016-10-02) |
Indirect excitons in polar group III nitride quantum wells. Auteur(s): Fedichkin F., Jouault B., Guillet T., Brimont C., Valvin P., Bretagnon T., Lahourcade Lise, Grandjean Nicolas, Lefebvre P., Vladimirova M.
Conférence invité: 8th International Conference on Materials Science and Condensed Matter Physics (Chisinau, MD, 2016-09-12) |
Indirect excitons in AlGaN/GaN polar quantum wells. Auteur(s): Vladimirova M., Jouault B., Fedichkin F., Guillet T., Brimont C., Valvin P., Bretagnon T., Grandjean N., Lefebvre P.
Conférence invité: 17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17. (Nara, JP, 2016-03-28) |
Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells Auteur(s): Fedichkin F., Guillet T., Valvin P., Jouault B., Brimont C., Bretagnon T., Lahourcade L., Grandjean N., Lefebvre P., Vladimirova M. (Article) Publié: Physical Review Applied, vol. 6 p.014011 (2016) Texte intégral en Openaccess : |