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(167) Production(s) de LEFEBVRE P.
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells Auteur(s): Lefebvre P., Allegre J, Gil B., Mathieu H, Grandjean N, Leroux M, Massies J, Bigenwald P (Article) Publié: Physical Review B, vol. 59 p.15363-15367 (1999) |
Barrier-width dependence of group-III nitrides quantum-well transition energies Auteur(s): Leroux M, Grandjean N, Massies J, Gil B., Lefebvre P., Bigenwald P (Article) Publié: Physical Review B, vol. 60 p.1496-1499 (1999) |
Highly photo-excited nitride quantum wells: Threshold for exciton bleaching Auteur(s): Bigenwald P, Kavokin A., Christol P, Gil B., Lefebvre P.
Conference: 3rd International Conference on Nitride Semiconductors (ICNS 99) (MONTPELLIER (FRANCE), FR, 1999-07-04) |
Confined excitons in GaN-AlGaN quantum wells Auteur(s): Bigenwald P, Lefebvre P., Bretagnon T., Gil B.
Conference: 3rd International Conference on Nitride Semiconductors (ICNS 99) (MONTPELLIER (FRANCE), FR, 1999-07-04) |
CW and time-resolved optical spectroscopy of GaN epilayers and GaN-AlGaN quantum wells grown on A-plane sapphire Auteur(s): Gallart M, Taliercio T, Alemu A, Lefebvre P., Gil B., Allegre J, Mathieu H, Nakamura S
Conference: 3rd International Conference on Nitride Semiconductors (ICNS 99) (MONTPELLIER (FRANCE), FR, 1999-07-04) |
Dynamics of excitons in GaN-AlGaN MQWs with varying depths, thicknesses and barrier widths Auteur(s): Lefebvre P., Gallart M, Taliercio T, Gil B., Allegre J, Mathieu H, Grandjean N, Leroux M, Massies J, Bigenwald P
Conference: 3rd International Conference on Nitride Semiconductors (ICNS 99) (MONTPELLIER (FRANCE), FR, 1999-07-04) |
Slow spin relaxation observed in InGaN/GaN multiple quantum wells Auteur(s): Julier M, Vinattieri A, Colocci M, Lefebvre P., Gil B., Scalbert D., Tran Ca, Karlicek Rf, Lascaray Jean-paul
Conference: 3rd International Conference on Nitride Semiconductors (ICNS 99) (MONTPELLIER (FRANCE), FR, 1999-07-04) |