Accueil > Production scientifique
(167) Production(s) de LEFEBVRE P.
GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters. Auteur(s): Fernandez-Garrido S., Grandal J., Lefebvre P., Sanchez-Garcia M.A., Calleja E. (Affiches/Poster) 3rd International Symposium on Growth of III-Nitrides - ISGN3. (Montpellier, FR), 2010-07-04 |
Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE. Auteur(s): Bengoechea-Encabo Ana, Grandal J., Fernandez-Garrido S., Sanchez-Garcia M.A., Barbagini Francesca, Lefebvre P., Calleja E., Luna E., Trampert A.
Conference: 16th International Conference on Molecular Beam Epitaxy (MBE 2010) (Berlin, DE, 2010-08-22) |
MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates. Auteur(s): Albert Steven, Grandal J., Sanchez-Garcia M.A., Lefebvre P., Ristic J., Calleja E., Vilalta-Clemente Arantxa, Lacroix Bertrand, Ruterana Pierre, Luna E., Jahn Uwe, Trampert A. (Affiches/Poster) 16th International Conference on Molecular Beam Epitaxy (MBE 2010) (Berlin, DE), 2010-08-22 |
Spontaneous and ordered growth of III-N nanocolumns: growth mechanisms and applications to Optoelectronic Devices. Auteur(s): Calleja E., Bengoechea-Encabo Ana, Grandal J., Fernandez-Garrido S., Ristic J., Sanchez-Garcia M.A., Barbagini Francesca, Lefebvre P., Calleja J.M., Gallardo E., Luna E., Trampert A., Jahn Uwe
Conférence invité: International Workshop on Nitride Semiconductors - IWN 2010 (Tampa, Floride., US, 2010-09-19) |
Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy. Auteur(s): Lefebvre P., Albert Steven, Ristic J., Sanchez-Garcia M.A., Calleja E.
Conference: International Workshop on Nitride Semiconductors - IWN 2010 (Tampa, Floride., US, 2010-09-19) |
Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN. Auteur(s): Corfdir Pierre, Dussaigne Amélie, Lefebvre P., Teisseyre H., Suski Tadeusz, Grzegory Izabella, Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit (Affiches/Poster) International Workshop on Nitride Semiconductors - IWN 2010 (Tampa, Floride., US), 2010-09-19 |
Distortion of donor properties in III-nitride based nano-scale systems. Auteur(s): Corfdir Pierre, Lefebvre P., Ganière Jean-Daniel, Deveaud-Plédran Benoit
Conference: International Workshop on Nitride Semiconductors - IWN 2010 (Tampa, Floride., US, 2010-09-19) |