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(227) Production(s) de TEPPE F.
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TeraHertz detectors based on plasma oscillations in nanometric silicon field effect transistors 
Auteur(s): Teppe F., Meziani Ym, Diakonova N., Lusakowski J, Boeuf F, Skotnicki T, Maude D, Rumyantsev S, Shur Ms, Knap W.
Conference: 7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (Montpellier (FRANCE), FR, 2004-06-01)
Actes de conférence: PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 4, vol. 2 p.1413-1417 (2005)
Ref HAL: hal-00540642_v1
Exporter : BibTex | endNote
Résumé: We report on the experiments about detection of the THz radiation by silicon FETs with nanometer gate lengths. The observed photo-responses measured as a function of the gate voltage are all in agreement with the predictions of the Dyakonov-Shur theory. The plasma wave parameters deduced from the experiments allow us to predict also the possibility of resonant detection in THz range by nanometer size silicon devices. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
Auteur(s): Diakonova N., Teppe F., Lusakowski J, Knap W., Levinshtein M, Dmitriev Ap, Shur Ms, Bollaert S, Cappy A
(Article) Publié:
Journal Of Applied Physics, vol. 97 p.114313 (2005)
Ref HAL: hal-00540641_v1
DOI: 10.1063/1.1921339
WoS: 000229804700107
Exporter : BibTex | endNote
66 Citations
Résumé: The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important. (C) 2005 American Institute of Physics.
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Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
Auteur(s): Teppe F., Veksler D, Kachorovski Vy, Dmitriev Ap, Xie X, Zhang Xc, Rumyantsev S, Knap W., Shur Ms
(Article) Publié:
Applied Physics Letters, vol. 87 p.022102 (2005)
Ref HAL: hal-00540640_v1
DOI: 10.1063/1.1952578
WoS: 000230435800020
Exporter : BibTex | endNote
74 Citations
Résumé: We report on the room-temperature, resonant detection of femtosecond pulsed terahertz radiation obtained by optical rectification in a ZnTe crystal. The detection was realized using a 250 nm gate length GaAs/AlGaAs heterostructure field-effect transistor. We show that physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is strongly enhanced by increasing the drain current and driving the transistor into the plasma wave instability region. Our results clearly show that plasma wave nanometer transistors can be efficient and fast detectors for terahertz spectroscopic imaging based on the femtosecond pulsed THz sources. (c) 2005 American Institute of Physics.
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Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
Auteur(s): Teppe F., Knap W., Veksler D, Shur Ms, Dmitriev Ap, Kachorovskii Vy, Rumyantsev S
(Article) Publié:
Applied Physics Letters, vol. 87 p.052107 (2005)
Ref HAL: hal-00540639_v1
DOI: 10.1063/1.2005394
WoS: 000230886100037
Exporter : BibTex | endNote
140 Citations
Résumé: We report on room-temperature, resonant detection of 0.6 THz radiation by 250 nm gate length GaAs/AlGaAs heterostructure field-effect transistor. We show that the detection is strongly increased (and becomes resonant) when the drain current increases and the transistor is driven into the current saturation region. We interpret the results as due to resonant plasma wave detection that is enhanced by increasing the electron drift velocity. (c) 2005 American Institute of Physics.
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Terahertz emission by plasma waves in high electron mobility transistors
Auteur(s): Knap W., Lusakowski J., Teppe F., Diakonova N.
Conférence invité: 7th Topical Workshop on Heterostructure Microelectronics (TWHM 2007) (Hyogo, JP, 2005)
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Nonresonant detection of terahertz radiation by silicon-on-insulator MUM
Auteur(s): Pala N., Teppe F., Veksler D., Deng Y., Shur Ms, Gaska R.
(Article) Publié:
Electronics Letters, vol. 41 p.447 (2005)
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Terahertz generation and detection by plasma waves in nanometer gate high electron mobility transistors
Auteur(s): Knap W., Teppe F., Diakonova N., Meziani Y.M., Lusakowski J., Varani L., Millithaler J.F.
Conference: 5th Int. Conf. and 7th annual general meeting of the European Society for Precision Engineering and Nanotechnology (EUSPEN) (Montpellier, FR, 2005)
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