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(419) Production(s) de l'année 2017
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Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers
Auteur(s): Anton Gregory, But D., Zhang Jiawei, Hill Ernie, Coquillat D., Consejo C., Nouvel Philippe, Knap W., Varani Luca, Teppe F., Torres Jeremie, Song Aimin
(Article) Publié:
Nano Letters, vol. 17 p.7015-7020 (2017)
Texte intégral en Openaccess :
Ref HAL: hal-01710499_v1
PMID 29016145
DOI: 10.1021/acs.nanolett.7b03625
WoS: WOS:000415029000076
Exporter : BibTex | endNote
32 Citations
Résumé: A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as a terahertz (THz) detector. A small-area (<1 μm2) local gate is used to adjust the Fermi level in the device to optimize the output while minimizing the impact on the cutoff frequency. The device operates in both n- and p-type transport regimes and shows a peak extrinsic responsivity of 764 V/W and a corresponding noise equivalent power of 34 pW Hz–1/2 at room temperature with no indications of a cutoff frequency up to 0.45 THz. The device also demonstrates a linear response for more than 3 orders of magnitude of input power due to its zero threshold voltage, quadratic current–voltage characteristics and high saturation current. Finally, the device is used to take an image of an optically opaque object at 0.685 THz, demonstrating potential in both medical and security imaging applications.
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Cross-section doping topography of 4H-SiC VJFETs by various techniques
Auteur(s): Tsagaraki K., Nafouti Maher, Peyre H., Vamvoukakis K, Makris N, Kayambaki M, Stavrinidis A, Konstantinidis G, Panagopoulou M, Alquier D., Zekentes Konstantinos
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, DC, US, 2017-09-17)
Texte intégral en Openaccess :
Ref HAL: hal-01698971_v1
DOI: 10.4028/www.scientific.net/MSF.924.653
Exporter : BibTex | endNote
Résumé: Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.
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Magnetic two-dimensional field effect transistor
Auteur(s): Raymond A., Chaubet C., Chenaud B., Delgard A., Bisotto I., Harmand J. C., Zawadzki W.
(Article) Publié:
Applied Physics Letters, vol. 111 p.233508 (2017)
Ref HAL: hal-01692837_v1
DOI: 10.1063/1.4994634
WoS: WOS:000418349100051
Exporter : BibTex | endNote
1 Citation
Résumé: We study experimentally low-temperature current-voltage characteristics of n-type GaAs/GaAlAs modulation doped quantum wells under the influence of an external magnetic field. In particular, we use samples doped additionally in the well with Be acceptors. As showed previously, negatively charged acceptor ions can localize conduction electrons by a joint effect of a quantum well and an external magnetic field. It is found that, in the acceptor-doped samples, the Hall field resulting from the presence of magnetic field plays the role of gate voltage. At sufficiently high magnetic fields the drain current has a constant value independent of the drain voltage. It is argued that the above phenomenon is due to the electron localization with the resulting decrease of conducting electron density in the crossed-field configuration. We propose to exploit the observed unusual behaviour as a new device called “magnetic two-dimensional field effect transistor” (M-TEGFET) operating at low temperatures.
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Detection and localization of luminescent nanodiamonds in cellular environment using Raman imaging
Auteur(s): Gulka Michal, Varga B., Salehi Hamideh, Middendorp Elodie, Cloitre T., Cuisinier Frédéric J. G., Cígler Petr, Nesladek Milos, Gergely C.
Conference: MRS 2017, Fall Meeting and exhibit (, Boston, US, 2017-11-26)
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Precise nanodiamonds localization in cellular environment
Auteur(s): Gulka Michal, Varga B., Salehi Hamideh, Middendorp Elodie, Cloitre T., Cuisinier Frédéric J. G., Cígler Petr, Nesladek Milos, Gergely C.
Conference: E-MRS 2017, Fall Meeting (Warsaw, PL, 2017-09-18)
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