The Casimir force arises from the quantum fluctuations of the electromagnetic field. It leads to an attraction between electrically neutral bodies with a vacuum gap that be- comes measureable at nanoscale separations. Under the trend of miniaturization, such quantum electrodynamical effects are expected to play an important role in nanomechanical devices. One remarkable property of the Casimir force is its non-trivial dependence on the shape of the in- teracting bodies. Experiments using the corrugated surface of gratings have demonstrated the deviation of the Casimir force from the proximity force approximation. In these experiments, it was necessary to choose one of the bodies to be a sphere to circumvent alignment difficulties.Here, we present measurement of the Casimir force gradient between two microfabricated silicon beams, both of which contain rectangular corrugations. One of the beams acts as the forcesensing element. As it vibrates in a perpendicular magnetic field, a back electromotive force is generated and the corresponding change in the current is measured. The force gradient exerted on this beam is measured from the resonance frequency shift. The distance to the other beam is controlled using a comb actuator integrated on the same substrate, where electrostatic forces push the second beam towards the force-sensing beam. By using lithography to define the structures, they are aligned to allow the two gratings to interpenetrate when the separation between them is reduced. Our data shows a number of novel features, including strong deviations of the force gradient from the proximity force approximation and a non-zero, distance-independent Casimir force over certain range of displacement.We will also discuss the design of a bridge to measure the difference in Casimir forces on two types of surfaces. By fabricating an additional sensing beam next to the original one and measuring their resonant frequency shifts simultaneously in the same experimental run, the difference in the Casimir force gradient of two different geometries can be compared.

Metasurfaces are planar metamaterials that consist of a single or a few stack of subwavelength thickness metal-dielectric layers. They could be periodically structured or not with subwavelength scale patterns according to the transverse directions. The strong interac- tion between an electromagnetic field components and these surfaces, exhibits some properties that could not be found in nature. These artificial properties strongly depend on the shape and arrangement of the elementary patterns and they are often linked to a plasmon resonance phe- nomenon. Metasurfaces working in the visible range generally consist in periodical arrangments of plasmonic resonators. These resonators are inherently muti-scale, as their responses relie on the excitation of resonances in very small gaps, like in the case of gap-plasmon resonators [1] or for bow-tire antennas. The simulation of their electromagnetic response can be very challeng- ing and may be successfully treated thanks to a modal method holding the complexity of the patterns shape. Here we present a polynomial modal method [2–5] that is particularly suited for the simulation of metallic structures. Advanced coordinates transformation such as matched coordinates and tilted coordinates are included in order to hold efficiently the complexity of the geometry without any approximation. Such a tool even offers the possibility to control the way the resonators are periodically arranged.

We study the radiative heat transfer between multilayer structures made by a periodic repetition of a graphene sheet and a hexagonal boron nitride (hBN) slab. Surface plasmons in a monolayer graphene can couple with hyperbolic phonon polaritons in a single hBN film to form hybrid polaritons that can assist photon tunneling. For periodic multilayer graphene/hBN structures, the stacked metallic/dielectric array can give rise to a further effective hyperbolic behavior, in addition to the intrinsic natural hyperbolic behavior of hBN. The effective hyperbolicity can en- able more hyperbolic polaritons that enhance the photon tunneling and hence the near-field heat transfer. However, the hybrid polaritons on the surface, i.e., surface plasmon-phonon polaritons, dominate the near-field heat transfer between multilayer structures when the topmost layer is graphene. The effective hyperbolic regions can be well predicted by the effective medium theory (EMT), thought EMT fails to capture the hybrid surface polaritons and results in a heat trans- fer rate much lower compared to the exact calculation. The chemical potential of the graphene sheets can be tuned through electrical gating and results in an additional modulation of the heat transfer. We found that the near-field heat transfer between multilayer structures does not increase monotonously with the number of layers in the stack, which provides a way to control the heat transfer rate by the number of graphene layers in the multilayer structure. The results may benefit the applications of near-field energy harvesting and radiative cooling based on hybrid polaritons in two-dimensional materials.

AlN epilayer properties (120 nm thick) grown by ammonia assisted molecular beam epitaxy on c-sapphire substrates with different low temperature AlN buffer layers (LT-BL) have been studied. The role of the LT-BL on the AlN structural and optical properties was investigated as a function of the LT-BL thickness and growth temperature. Optimum growth conditions were identified with LT-BL thickness of 3 nm and growth temperature between 480 degrees C and 520 degrees C. It was shown that by optimizing these conditions, a reduction of both mixed and edge threading dislocation densities up to 75% is achieved. The impact of the growth temperature of the AlN epilayer was also studied showing an additional improvement of the AlN crystal and morphological properties while growing at higher temperature. A correlation between the epilayer strain and the PL emission was also investigated. Finally, an Al0.7Ga0.3N:Si doped layer was grown on the top of the optimized AlN template showing a smooth surface with monoatomic steps and a roughness similar to 0.2 nm, confirming the potential of such templates for the fabrication of AlGaN based heterostructures.

Ultra-violet (UV) light emitting diodes (LEDs) using III-N quantum dot (QD) active regions have been fabricated by molecular beam epitaxy on (0001)-oriented sapphire substrates. By using the epitaxial compressive stress between the QD material and the template/barrier layers, leading to a 2D-3D growth mode transition, self-assembled QDs with a nominal Al composition of 10% and 20% have been fabricated on A(10.6)Ga(0.4)N. Atomic force microscopy and transmission electron microscopy measurements show high QD densities, ranging between 2 x 10(11)-5 x 10(11) cm(-2), and height and diameter distributions between 1.5-3 nm and 5-20 nm. LED structures including two different AlyGa1-yN/Al0.6Ga0.4N (0001) QD active regions have then been fabricated and processed using a standard planar geometry and squared mesa structures. Current voltage characteristics and electroluminescence (EL) measurements have been performed at room temperature. In particular, the EL properties are investigated in terms of spectral range and wavelength shift as a function of the injection current density. Typically, an emission between 325 and 335 nm is obtained for Al0.2Ga0.9N QDs and between 305 and 320 nm for Al0.2Ga0.8N QDs. The LED characteristics (EL wavelength and broadening) are then correlated to the QD structural properties and the results, supported by calculations, show the main influence of the QD height dispersion and composition fluctuations. Finally, the light output intensity variation as a function of the injection current density has also been investigated and is discussed in terms of injection and recombination mechanisms in the devices.

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap similar to 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN

Much recent attention has been devoted towards unraveling the microscopic optoelectronic properties of hybrid organic-inorganic perovskites. Here we investigate by coherent inelastic neutron scattering spectroscopy and Brillouin light scattering, low frequency acoustic phonons in four different hybrid perovskite single crystals: MAPbBr3, FAPbBr3, MAPbI3, and α−FAPbI3 (MA: methylammonium, FA: formamidinium). We report a complete set of elastic constants characterized by a very soft shear modulus C44. Further, a tendency towards an incipient ferroelastic transition is observed in FAPbBr3. We observe a systematic lower sound group velocity in the technologically important iodide-based compounds compared to the bromide-based ones. The findings suggest that low thermal conductivity and hot phonon bottleneck phenomena are expected to be enhanced by low elastic stiffness, particularly in the case of the ultrasoft α−FAPbI3.