The Miles' quasi laminar theory of waves generation by wind in finite depth h is presented. In this context, the fully nonlinear Green–Naghdi model equation is derived for the first time. This model equation is obtained by the non perturbative Green–Naghdi approach, coupling a nonlinear evolution of water waves with the atmospheric dynamics which works as in the classic Miles' theory. A depth-dependent and wind-dependent wave growth γ is drawn from the dispersion relation of the coupled Green–Naghdi model with the atmospheric dynamics. Different values of the dimensionless water depth parameter $\delta = \frac{gh}{U_1}$, with g the gravity and $U_1$ a characteristic wind velocity, produce two families of growth rate γ in function of the dimensionless theoretical wave-age $c_0$: a family of γ with h constant and $U_1$ variable and another family of $\gamma$ with $U_1$ constant and $h$ variable. The allowed minimum and maximum values of $\gamma$ in this model are exhibited.

La possibilité pour un fluide viscoélastique de se fracturer a été mise en évidence pour la première fois dans les années 60 [1]] mais reste beaucoup moins documentée [2] que l’étude de la fracturation des matériaux solides Les hydrogels transitoires représentent une classe de matériaux viscoélastiques particulièrement bien adaptée pour l’investigation de fractures dans les fluides viscoélastiques, car leurs temps de relaxation et leur modules élastiques sont facilement modulables. Nous illustrons quelques aspects de la nucléation et de la propagation de fractures dans des réseaux transitoires modèles constitués de micelles se tensio-actifs pontées par des polymères téléchéliques en solution aqueuse. Deux géométrie seront considérées : cellule de Hele-Shaw [3] et rhéomètrie extensionnelle [4].[1] JF Hutton. Nature 200 (1963) 646
[2] C. Ligoure and S.Mora, Rheologica Acta, 52 (2013) 91-114 [3] , Foyart G., Ligoure C., Mora S., Ramos L. ACS Macro Letters, 5 (2016) 1080-1083 [4] , Arora S., Shabbir A., Hassager O., Ligoure C., Ramos L., JOR 61 (2017).1267-1275

The optical properties of Al0.1Ga0.9N nanostructures grown by molecular beam epitaxy on Al0.5Ga0.5N (0001) templates are investigated. By combining morphological and photo- luminescence (PL) characterizations, we have performed an in-depth analysis of the nanostructures properties as a function of the deposited amount. It is shown that: 1) the nanostructures present an asymmetrical height distribution, and a variation in their shape (i.e. both symmetric and elongated nanostructures are observed); 2) the main PL emission is found in the UV range (above 3.6 eV); and 3) a broad emission in the near UV-blue range is observed. These results allowed to attribute the main PL peak to nanostructures with properties in close agreement to the nominal Al0.1Ga0.9N concentration and deposited amount. Concerning the broad PL band at lower energy, it has been correlated to the formation of an additional type of nanostructures with larger size and lower Al compo- sition compared to the Al0.1Ga0.9N ones.

In this work, we investigate the impact of the quantum confined Stark effect and of the carrier localization on the internal quantum efficiency of polarized single or multiple InxGa1-xN/GaN quantum well(s), and semi-polar (11e22) multiple InxGa1-xN/InyGa1-yN quantum well. We find that increasing the influence of the quantum confined Stark effect at constant indium content with increasing the well-width induces a reduction of the internal quantum efficiency onsets for a decreasing value of the photoexcitation density. Similar but no so dramatic trend is reported when increasing the indium content and thus when increasing the localization of carriers to localized fluctuations of the chemical composition of the alloy. In addition, a change of the electric field internal to active layers (quantified by using time-resolved photoluminescence spectroscopy) realized by growing samples along a semi-polar orientation leads to experimental observation of a substantial enhancement of the threshold of photoexcitation density at which onsets the reduction of the internal quantum efficiency. A correlation is found through several orders of magni- tude between the photoexcitation density PT for the onset of the collapse of IQE and the values of the photoluminescence radiative decay time trad. A scaling law is found in the investigated samples: PT ~ trad-n with n 1⁄4 3/2 ± 0.15 which evidences that quantum confined Stark effect is the main origin for the efficiency droop in nitride light-emitting diodes based on InxGa1-xN active layers.

We develop a method of nonperturbative optical control over adiabatic remagnetization of the nuclear spin system and apply it to verify the spin temperature concept in GaAs microcavities. The nuclear spin system is shown to exactly follow the predictions of the spin temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalization. These findings open a way for the deep cooling of nuclear spins in semiconductor structures, with the prospect of realizing nuclear spin-ordered states for high-fidelity spin-photon interfaces.

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.

The elastic constants of high-quality, single-crystal hexagonal boron nitride (h-BN) have been measured by means of high resolution Brillouin spectroscopy using a modified reflected light microscope. The sound propagation velocity in the c-axis direction and perpendicular to the c-axis have been obtained from the Brillouin frequency shift, with a proper account taken of the vast difference between the ordinary and extraordinary refractive indices recently reported in the highly anisotropic layered h-BN crystal. The elastic constants c11 and c33 obtained from the Brillouin experiments are somewhat lower than previous determinations based on inelastic x-ray measurements and confirm the overestimation of the h-BN elastic constants by ab initio calculations based on density functional perturbation theory in the local density approximation.