Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)

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(52) Production(s) de PEYRE H.

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+ (Al,Ga)N quantum dots for deep UV LEDs

Auteur(s): Brault Julien, Matta Samuel, Al khalfioui Mohamed, Korytov M, Ngo T. H., Vuong P., Leroux Mathieu, Damilano Benjamin, Chenot S., Vennegues P, Duboz J. y., Massies Jean, Chaix C., Peyre H., Juillaguet S., Contreras S., Gil B.

Conference: International Workshop on Nitride Semiconductor (Kanazawa, JP, 2018-11-11)


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+ Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN hal link

Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al khalfioui Mohamed, Matta Samuel, Leroux Mathieu, Damilano Benjamin, Gil B., Brault Julien

(Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11


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+ Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy hal link

Auteur(s): Brault Julien, Leroux Mathieu, Matta Samuel, Al khalfioui Mohamed, Damilano Benjamin, Peyre H., Contreras S., Juillaguet S., Gil B.(Corresp.)

(Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11


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+ Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells doi link

Auteur(s): Briot O., Moret M., Barbier Camille, Tiberj A., Peyre H., Sagna A., Contreras S.

(Article) Publié: Solar Energy Materials And Solar Cells, vol. 174 p.418 - 422 (2018)


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+ Quantum Dot based UV Light Emitting Diodes hal link

Auteur(s): Brault Julien, Matta Samuel, Al khalfioui Mohamed, Leroux Mathieu, Damilano Benjamin, Chenot S., Korytov M, Peyre H., Konczewicz L., Contreras S., Chaix C., Massies Jean, Gil B.

(Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24


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+ High Temperature Electrical Transport Study of MBE grown Mg-doped AlGaN

Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al khalfioui Mohamed, Matta Samuel, Leroux Mathieu, Damilano Benjamin, Brault Julien

(Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24


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+ High temperature electrical transport study of n-type Si-doped AlN

Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Weyher J.l., Dziecielewski I, Al khalfioui Mohamed, Matta Samuel, Leroux Mathieu, Damilano Benjamin, Brault Julien, Gil B.

(Affiches/Poster) International Workshop on Ultraviolet Materials and Devices (FUKUOKA, JP), 2017-11-14


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