--------------------
- Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls” hal link

Auteur(s): Chassagne Thierry, Leycuras André, Balloud Carole, Arcade P., Peyre H., Juillaguet S.

Conference: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003) (Lyon, FR, 2003-10-05)
Actes de conférence: Materials Science Forum, vol. 457-460 p.273-276 (2004)


Ref HAL: hal-00389899_v1
Exporter : BibTex | endNote