Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls” Auteur(s): Chassagne Thierry, Leycuras André, Balloud Carole, Arcade P., Peyre H., Juillaguet S.
Conference: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003) (Lyon, FR, 2003-10-05) |