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Résumé:

We report a comparison of continuous-wave photo luminescence spectra with spatially-resolved micro-photoluminescence data collected at low temperature on as-grown stacking faults in a 4H-SiC epitaxial layer. We find that the defects have a large triangular shape (50 mu m x 50 mu m x 50 mu m) and that the maximum signal wavelength shifts when scanning across one triangular defect. These results show that the built-in electric field in the stacking fault well can be screened, more or less depending on the incoming light intensity.