Ref HAL: hal-00327759_v1
Ref Arxiv: 0810.1811
DOI: 10.1103/PhysRevB.78.235323
WoS: 000262245400086
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
49 Citations
Résumé:

Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials result in a different hierarchy of energies between the valence-band splitting, the effective Rydberg and the Rabi energy, defining the characteristics of the exciton-polariton states independently of the quality factor of the cavity. The knowledge of the composition of the polariton eigenstates is central to optimize such systems. We demonstrate that, in ZnO bulk microcavities, only the lower polaritons are good eigenstates and all other resonances are damped, whereas upper polaritons can be properly defined in GaAs and GaN microcavities.