--------------------
- Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC hal link

Auteur(s): Zielinski M., Portail M., Chassagne T., Juillaguet S., Peyre H., Leycuras A., Camassel J.

Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), ES, 2008-09-07)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2008, vol. 615-617 p.49-52 (2009)


Ref HAL: hal-00389376_v1
Exporter : BibTex | endNote
Résumé:

We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented "crucibles", the elaboration of crack-free (111) "crucibles" and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100 mu m thick 3C-SiC(100) as well as 30 mu m thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100 mu m/h and locally can even reach similar to 1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material.