Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity Auteur(s): Oehlschlaeger Felix, Juillaguet S., Peyre H., Calmassel Jean, Wellmann Peter
Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), ES, 2008-09-07) Ref HAL: hal-00389394_v1 Exporter : BibTex | endNote Résumé: Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following, work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2" at room- and low temperature in a non-destructive way. |