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- Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity hal link

Auteur(s): Oehlschlaeger Felix, Juillaguet S., Peyre H., Calmassel Jean, Wellmann Peter

Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), ES, 2008-09-07)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2008, vol. 615-617 p.259-262 (2009)


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Résumé:

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following, work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2" at room- and low temperature in a non-destructive way.