Auteur(s): Zoulis G., Sun J., Beshkova M., Vasiliauskas R., Juillaguet S., Peyre H., Syvajarvi M., Yakimova R., Camassel J.
Conference: 13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), FR, 2009-10-11)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, vol. 645-648 p.179-182 (2010)
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Résumé:
Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.