Auteur(s): Sun J. W., Zoulis G., Lorenzzi J., Jegenyes N., Juillaguet S., Peyre H., Souliere V., Ferro G., Milesi F., Camassel J.
Conference: 13th International Conference on Silicon Carbide and Related Materials (Nurnberg (GERMANY), FR, 2009-10-11)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, vol. 645-648 p.415-418 (2010)
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Résumé:
Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (similar to 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.