Auteur(s): Rozhansky I. v., Lifshits M., Tarasenko S. a., Averkiev N. s.
(Article) Publié: Physical Review B, vol. 80 p.085314 (2009)
DOI: 10.1103/PhysRevB.80.085314
WoS: 000269639300075
5 Citations
Résumé:
The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence-band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.