Auteur(s): Nouvel P., Torres J., Marinchio H., Laurent T., Blin S., Chusseau L., Palermo C., Varani L., Shiktorov P., Starikov E., Gruzhinskis V., Teppe F., Coquillat D.
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05)
Actes de conférence: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), vol. p.1 (2010)
Ref HAL: hal-00636142_v1
Exporter : BibTex | endNote
Résumé:
Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200 K.