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- Spin related effect in Terahertz Photovoltaic Response of Si-MOSFETs

Auteur(s): Videlier H., Diakonova N., Teppe F., Consejo C., Knap W., Lusakowski J., Tomaszewski D., Marczewski J., Grabiec P.

Conference: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) (, IT, 2010-09-05)
Actes de conférence: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) Publish, vol. p.000288130600158 (2010)


Résumé:

We report on investigations of photovoltaic response of Si-MOSFETs subjected to Terahertz radiation in high magnetic fields. The MOSFETs develop a dc drain-to-source voltage that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions