Auteur(s): Corfdir Pierre, Lefebvre P., Dussaigne Amélie, Ristic J., Zhu T., Martin Denis, Grandjean N., Deveaud-Plédran Benoit, Ganière Jean-Daniel
(Affiches/Poster) 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010 (Halle (Saale), DE), 2010-07-04
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Résumé:
Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.