Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals. Auteur(s): Corfdir Pierre, Dussaigne Amélie, Teisseyre H., Grzegory Izabella, Suski Tadeusz, Lefebvre P., Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit (Affiches/Poster) 38th International Symposium on Compound Semiconductors - ISCS38. (Berlin, DE), 2011-05-22 |