Auteur(s): Zoulis G., Sun J., Vasiliauskas R., Lorenzzi J., Peyre H., Syvajarvi M., Ferro G., Juillaguet S., Yakimova R., Camassel J.
Conference: HETEROSIC & WASMPE 2011 (TOURS, FR, 2011-06-27)
Actes de conférence: Materials Science Forum, vol. 711 p.149-153 (2012)
Ref HAL: hal-00655917_v1
DOI: 10.4028/www.scientific.net/MSF.711.149
WoS: 000302673900027
Exporter : BibTex | endNote
1 Citation
Résumé:
We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homogeneity of the polytype conversion but, also, to the LTPL signal intensity. From the use of a simple model, we show that this comes from a reduced density of non-radiative recombination centers.